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2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band.
PACKAGE STYLE .500 6L FLG
C A
3
D
1
2x O N FULL R
FEATURES:
* 175 MHz 12.5 V * PG = 6.4 dB at 80 W/175 MHz * OmnigoldTM Metalization System * Common Emitter configuration
DIM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 D E F G H I J K L M N .120 / 3.05 .970 / 24.64 .090 / 2.29 .150 / 3.81 B G
2
.725/18,42 F
4
E
K H M INIM UM
inches / m m
M L
J
I
M AXIM UM
inches / m m
.150 / 3.43 .045 / 1.14
.160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .125 / 3.18 .725 / 18.42 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC 20 A 36 V 16 V 4.0 V 220 W @ TC = 25 C -65 C to +175 C -65 C to +175 C 0.68 C/W
1 = Collecttor 2 = Base 3&4 = Emitter
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO hFE COB PG C ZIN ZCL IC = 50 mA IC = 20 mA IE = 1.0 mA
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16 36 4.0
UNITS
V V V
VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V PIN = 18 W VCC = 12.5 V VCC = 12.5 V
IC = 10 A f = 1.0 MHz POUT = 80 W POUT = 80 W POUT = 80 W f = 175 MHz f = 175 MHz f = 175 MHz
10 6.4 60 ----6.8 70 1.0 + j1.5 1.2 + j1.8
100 390
--pF dB %
-----

A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A 1/1

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